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2SD2230

器件描述:NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
器件厂商:NEC [NEC]
文件大小:119.67KB,共6页
Sponsor by e络盟
器件资料摘要:
1998©
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2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2230 is an element realizing ultra low VCE(sat). This
transistor is ideal for muting such as stereo recorders, VCRs,
and TVs.
FEATURES
• Low VCE(sat):
VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA
VCE(sat)2 = 150 mV TYP. @IC = 500 mA, IB = 20 mA
High hFE and high current
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 16 V
Collector to emitter voltage VCEO
16
V
Emitter to base voltage VEBO
5
V
Collector current (DC) ID(DC)
500
mA
Total power dissipation PT 200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Electrode connection
1. Emitter (E)
2. Base (B)
3. Collector (C)
Marking: D46