Power Transistors
1
Publication date: July 2004 SJD00315AED
2SA2118
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
■ Features
• Satisfactory linearity of forward current transfer ratio h
FE
• Dielectric breakdown voltage of the package: 5 kV
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Rank Q P
h
FE1
60 to 140 100 to 240
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−200 V
Collector-emitter voltage (Base open) V
CEO
−180 V
Emitter-base voltage (Collector open) V
EBO
−6V
Collector current I
C
−2A
Peak collector current I
CP
−3A
Collector power P
C
25 W
dissipation T
a
= 25°C 2.0
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −50 µA, I
E
= 0 −200 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −5 mA, I
B
= 0 −180 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −500 µA, I
C
= 0 −6V
Base-emitter voltage V
BE
V
CE
= −10 V, I
C
= −400 mA −1V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −200 V, I
E
= 0 −50 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −4 V, I
C
= 0 −50 µA
Forward current transfer ratio h
FE1
*
V
CE
= −10 V, I
C
= −150 mA 60 240 
h
FE2
V
CE
= −10 V, I
C
= −400 mA 50
Collector-emitter saturation voltage V
CE(sat)
I
C
= −500 mA, I
B
= −50 mA −1V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 10 MHz 30 MHz
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip