4239-00
器件描述：SPDT UltraCMOS⑩ RF Switch
器件厂商：PEREGRINE [Peregrine Semiconductor Corp.]
文件大小：249.31KB，共8页
Sponsor by e络盟器件资料摘要：
Page 1 of 8
Document No. 70-0068-01 │ www.psemi.com ©2005 Peregrine Semiconductor Corp. All rights reserved.
RFCommon
RF1 RF2
CMOS
Control
Driver
CTRL CTRL or V
DD
The PE4239 UltraCMOS™ RF Switch is designed to cover a
broad range of applications from DC through 3.0 GHz. This
reflective switch integrates on-board CMOS control logic with a
low voltage CMOS-compatible control interface, and can be
controlled using either single-pin or complementary control
inputs. Using a nominal +3-volt power supply voltage, a typical
input 1 dB compression point of +27 dBm can be achieved.
The PE4239 UltraCMOS™ RF Switch is manufactured in
Peregrine’s patented Ultra Thin Silicon (UTSi®) CMOS
process, offering the performance of GaAs with the economy
and integration of conventional CMOS.
Product Specification
SPDT UltraCMOS™ RF Switch
Product Description
Figure 1. Functional Diagram
Figure 2. Package Type SC-70
PE4239
Features
• Single-pin or complementary CMOS
logic control inputs
• +3.0-volt power supply needed for
single-pin control mode
• Low insertion loss: 0.7 dB at 1.0 GHz,
0.9 dB at 2.0 GHz
• Isolation of 32 dB at 1.0 GHz, 23 dB at
2.0 GHz
• Typical input 1 dB compression point of
+27 dBm
• Ultra-small SC-70 package
Parameter Conditions Minimum Typical Maximum Units
Operation Frequency
1
DC 3000 MHz
Insertion Loss
1000 MHz
2000 MHz
0.7
0.9
0.85
1.05
dB
dB
Isolation
1000 MHz
2000 MHz
30
21
32
23
dB
dB
Return Loss
1000 MHz
2000 MHz
18
16
20
18
dB
dB
‘ON’ Switching Time 50% CTRL to 0.1 dB of final value, 1 GHz 300 ns
‘OFF’ Switching Time 50% CTRL to 25 dB isolation, 1 GHz 200 ns
Video Feedthrough
2
15 mV
pp
Input 1 dB Compression 2000 MHz 26 27 dBm
Input IP3 2000 MHz, 14 dBm input power 43 45 dBm
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low in a 50 Ω test
set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.
Table 1. Electrical Specifications @ +25 °C, V
DD
= 3 V (Z
S
= Z
L
= 50 Ω)
6-lead SC-70
Document No. 70-0068-01 │ www.psemi.com ©2005 Peregrine Semiconductor Corp. All rights reserved.
RFCommon
RF1 RF2
CMOS
Control
Driver
CTRL CTRL or V
DD
The PE4239 UltraCMOS™ RF Switch is designed to cover a
broad range of applications from DC through 3.0 GHz. This
reflective switch integrates on-board CMOS control logic with a
low voltage CMOS-compatible control interface, and can be
controlled using either single-pin or complementary control
inputs. Using a nominal +3-volt power supply voltage, a typical
input 1 dB compression point of +27 dBm can be achieved.
The PE4239 UltraCMOS™ RF Switch is manufactured in
Peregrine’s patented Ultra Thin Silicon (UTSi®) CMOS
process, offering the performance of GaAs with the economy
and integration of conventional CMOS.
Product Specification
SPDT UltraCMOS™ RF Switch
Product Description
Figure 1. Functional Diagram
Figure 2. Package Type SC-70
PE4239
Features
• Single-pin or complementary CMOS
logic control inputs
• +3.0-volt power supply needed for
single-pin control mode
• Low insertion loss: 0.7 dB at 1.0 GHz,
0.9 dB at 2.0 GHz
• Isolation of 32 dB at 1.0 GHz, 23 dB at
2.0 GHz
• Typical input 1 dB compression point of
+27 dBm
• Ultra-small SC-70 package
Parameter Conditions Minimum Typical Maximum Units
Operation Frequency
1
DC 3000 MHz
Insertion Loss
1000 MHz
2000 MHz
0.7
0.9
0.85
1.05
dB
dB
Isolation
1000 MHz
2000 MHz
30
21
32
23
dB
dB
Return Loss
1000 MHz
2000 MHz
18
16
20
18
dB
dB
‘ON’ Switching Time 50% CTRL to 0.1 dB of final value, 1 GHz 300 ns
‘OFF’ Switching Time 50% CTRL to 25 dB isolation, 1 GHz 200 ns
Video Feedthrough
2
15 mV
pp
Input 1 dB Compression 2000 MHz 26 27 dBm
Input IP3 2000 MHz, 14 dBm input power 43 45 dBm
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low in a 50 Ω test
set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.
Table 1. Electrical Specifications @ +25 °C, V
DD
= 3 V (Z
S
= Z
L
= 50 Ω)
6-lead SC-70