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Document No. 70-0097-01 │ www.psemi.com ©2005 Peregrine Semiconductor Corp. All rights reserved.
RFCommon
RF1 RF2
CMOS
Control
Driver
CTRL
The PE4231 SPDT High Power UltraCMOS™ RF Switch is
designed to cover a broad range of applications from DC to 1.3
GHz. This single-supply reflective switch integrates on-board
CMOS control logic driven by a simple, single-pin CMOS or
TTL compatible control input. Using a nominal +3-volt power
supply, a typical input 1 dB compression point of +32 dBm can
be achieved. The PE4231 also exhibits input-output isolation of
better than 42 dB at 1.0 GHz and is offered in a small 8-lead
MSOP package.

The PE4231 SPDT High Power UltraCMOS™ RF Switch is
manufactured in Peregrine’s patented Ultra Thin Silicon
(UTSi®) CMOS process, offering the performance of GaAs with
the economy and integration of conventional CMOS.
Product Specification
SPDT High Power UltraCMOS™
DC – 1.3 GHz RF Switch
Product Description
Figure 1. Functional Diagram
PE4231
Features
• Optimized for 75 Ω systems
• Single +3-volt power supply
• Low insertion loss: 0.80 dB at 1.0 GHz
• High isolation: 42 dB at 1.0 GHz
• Typical input 1 dB compression point of
+32 dBm
• Single-pin CMOS or TTL logic control
• Low cost
Notes: 1. Device linearity will begin to degrade below 1 MHz.
2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth.
3. Measured in a 50 Ω system.
Figure 2. Package Type
Table 1. Electrical Specifications @ +25 °C, V
DD
= 3 V (Z
S
= Z
L
= 75 Ω )
Parameter Conditions Minimum Typical Maximum Units
Operation Frequency
1
DC 1300 MHz
Insertion Loss
50 MHz
1000 MHz

0.50
0.80
0.60
0.90
dB
Isolation – RFCommon to
RF1/RF2
50 MHz
1000 MHz
73
40
75
42
dB
Isolation – RF1 to RF2
50 MHz
1000 MHz
58
33
60
35
dB
Return Loss 1000 MHz 16 17 dB
‘ON’ Switching Time CTRL to 0.1 dB final value, 2 GHz 2000 ns
‘OFF’ Switching Time CTRL to 25 dB isolation, 2 GHz 900 ns
Video Feedthrough
2
15 mV
pp

Input 1 dB Compression
3
1000 MHz 30 32 dBm
Input IP3
3
1000 MHz, 17 dBm 50 dBm
8-lead MSOP