4230
器件描述：SPDT High Power UltraCMOS⑩ RF Switch
器件厂商：PEREGRINE [Peregrine Semiconductor Corp.]
文件大小：258.75KB，共7页
Sponsor by e络盟器件资料摘要：
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Document No. 70-0029-02 │ www.psemi.com ©2005 Peregrine Semiconductor Corp. All rights reserved.
Parameter Conditions Minimum Typical Maximum Units
Operation Frequency
1
DC 3000 MHz
Insertion Loss
1000 MHz
2000 MHz
0.35
0.55
0.45
0.65
dB
dB
Isolation – RFC to RF1/RF2
1000 MHz
2000 MHz
38
28
39
30
dB
dB
Isolation – RF1 to RF2
1000 MHz
2000 MHz
33.5
26.5
35
28
dB
dB
Return Loss
1000 MHz
2000 MHz
23.5
14.5
25.5
15.4
dB
dB
‘ON’ Switching Time CTRL to 0.1 dB final value, 2 GHz 200 ns
‘OFF’ Switching Time CTRL to 25 dB isolation, 2 GHz 90 ns
Video Feedthrough
2
15 mV
pp
Input 1 dB Compression 2000 MHz 30 32 dBm
Input IP3 2000 MHz, 17 dBm 50 dBm
RFC
RF1 RF2
CMOS
Control
Driver
CTRL
The PE4230 UltraCMOS™ RF Switch is designed to cover a
broad range of applications from DC through 3000 MHz. This
single-supply reflective switch integrates on-board CMOS
control logic driven by a simple, single-pin CMOS or TTL
compatible control input. Using a nominal +3-volt power supply,
a typical input 1 dB compression point of +32 dBm can be
achieved. The PE4230 also exhibits input-output isolation of
better than 39 dB at 1000 MHz and is offered in a small 8-lead
MSOP package.
The PE4230 SPDT High Power UltraCMOS™ RF Switch is
manufactured in Peregrine’s patented Ultra Thin Silicon
(UTSi®) CMOS process, offering the performance of GaAs with
the economy and integration of conventional CMOS.
Product Specification
SPDT High Power UltraCMOS™
RF Switch
Product Description
Figure 1. Functional Diagram
PE4230
Features
• Single 3-volt power supply
• Low insertion loss: 0.35 dB at
1000 MHz, 0.55 dB at 2000 MHz
• High isolation of 39 dB at 1000 MHz,
30 dB at 2000 MHz
• Typical input 1 dB compression point
of +32 dBm
• Single-pin CMOS or TTL logic control
• Low cost
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to
High or High to Low in a 50 Ω test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.
Table 1. Electrical Specifications @ +25 °C, V
DD
= 3 V (Z
S
= Z
L
= 50 Ω )
Figure 2. Package Type
8-lead MSOP
Document No. 70-0029-02 │ www.psemi.com ©2005 Peregrine Semiconductor Corp. All rights reserved.
Parameter Conditions Minimum Typical Maximum Units
Operation Frequency
1
DC 3000 MHz
Insertion Loss
1000 MHz
2000 MHz
0.35
0.55
0.45
0.65
dB
dB
Isolation – RFC to RF1/RF2
1000 MHz
2000 MHz
38
28
39
30
dB
dB
Isolation – RF1 to RF2
1000 MHz
2000 MHz
33.5
26.5
35
28
dB
dB
Return Loss
1000 MHz
2000 MHz
23.5
14.5
25.5
15.4
dB
dB
‘ON’ Switching Time CTRL to 0.1 dB final value, 2 GHz 200 ns
‘OFF’ Switching Time CTRL to 25 dB isolation, 2 GHz 90 ns
Video Feedthrough
2
15 mV
pp
Input 1 dB Compression 2000 MHz 30 32 dBm
Input IP3 2000 MHz, 17 dBm 50 dBm
RFC
RF1 RF2
CMOS
Control
Driver
CTRL
The PE4230 UltraCMOS™ RF Switch is designed to cover a
broad range of applications from DC through 3000 MHz. This
single-supply reflective switch integrates on-board CMOS
control logic driven by a simple, single-pin CMOS or TTL
compatible control input. Using a nominal +3-volt power supply,
a typical input 1 dB compression point of +32 dBm can be
achieved. The PE4230 also exhibits input-output isolation of
better than 39 dB at 1000 MHz and is offered in a small 8-lead
MSOP package.
The PE4230 SPDT High Power UltraCMOS™ RF Switch is
manufactured in Peregrine’s patented Ultra Thin Silicon
(UTSi®) CMOS process, offering the performance of GaAs with
the economy and integration of conventional CMOS.
Product Specification
SPDT High Power UltraCMOS™
RF Switch
Product Description
Figure 1. Functional Diagram
PE4230
Features
• Single 3-volt power supply
• Low insertion loss: 0.35 dB at
1000 MHz, 0.55 dB at 2000 MHz
• High isolation of 39 dB at 1000 MHz,
30 dB at 2000 MHz
• Typical input 1 dB compression point
of +32 dBm
• Single-pin CMOS or TTL logic control
• Low cost
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to
High or High to Low in a 50 Ω test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.
Table 1. Electrical Specifications @ +25 °C, V
DD
= 3 V (Z
S
= Z
L
= 50 Ω )
Figure 2. Package Type
8-lead MSOP