4210
器件描述:SPDT UltraCMOS⑩ RF Switch DC - 3000 MHz
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器件资料摘要:
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Document No. 70-0037-05 │ www.psemi.com ©2005 Peregrine Semiconductor Corp. All rights reserved.
Parameter Conditions Minimum Typical Maximum Units
Operating Frequency
1
DC 3000 MHz
Insertion Loss
1000 MHz
2000 MHz
0.30
0.45
0.40
0.60
dB
dB
Isolation – RFC to RF1/RF2
1000 MHz
2000 MHz
34.5
24.5
35.5
25
dB
dB
Isolation – RF1 to RF2
1000 MHz
2000 MHz
36.5
25.5
37.5
26.5
dB
dB
Return Loss
1000 MHz
2000 MHz
22.5
15
24.5
16
dB
dB
‘ON’ Switching Time CTRL to 0.1 dB final value, 2 GHz 200 ns
‘OFF’ Switching Time CTRL to 25 dB isolation, 2 GHz 90 ns
Video Feedthrough
2
2.5 mVpp
Input 1 dB Compression 2000 MHz 13 14.5 dBm
Input IP3 2000 MHz, 5 dBm 30 33.5 dBm
8-lead MSOP
RFC
RF1 RF2
CMOS
Control
Driver
CTRL
The PE4210 UltraCMOS™ RF Switch is designed to cover a
broad range of applications from near DC to 3000 MHz. This
single-supply switch integrates on-board CMOS control logic
driven by a simple, single-pin CMOS or TTL compatible control
input. Using a nominal +3-volt power supply, a typical input
1 dB compression point of +14 dBm can be achieved. The
PE4210 also exhibits input-output isolation of better than 35 dB
at 1000 MHz and is offered in a small 8-lead MSOP package.
The PE4210 UltraCMOS™ RF Switch is manufactured in
Peregrine’s patented Ultra Thin Silicon (UTSi®) CMOS
process, offering the performance of GaAs with the economy
and integration of conventional CMOS.
Product Specification
SPDT UltraCMOS™ RF Switch
DC - 3000 MHz
Product Description
Figure 1. Functional Diagram
PE4210
Features
• Single 3-volt power supply
• Low Insertion loss: 0.30 dB at 1000 MHz,
0.45 dB at 2000 MHz
• High isolation of 35 dB at 1000 MHz,
25 dB at 2000 MHz
• Typical input 1 dB compression point of
+14.5 dBm
• Single-pin CMOS or TTL logic control
• Packaged in a small 8-lead MSOP
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low
in a 50 Ω test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.
Table 1. Electrical Specifications @ +25 °C, V
DD
= 3 V (Z
S
= Z
L
= 50 Ω)
Figure 2. Package Type