2SD2318
Transistors
Rev.A 1/2
High-current gain Power Transistor
(60V, 3A)
2SD2318


zFeatures
1) High DC current gain.
2) Low saturation voltage.
(Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)
3) Complements the 2SB1639.


zAbsolute maximum ratings (Ta=25°C)
Parameter
∗ Single pulse PW=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
60
6
3
4.5 ∗
1
150
−55 to +150
Unit
V
V
V
A
A(Pulse)
W
15 W(TC=25°C)
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature


zExternal dimensions (Unit : mm)
2.3
0.51.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.50.65
0.9
(
1
)
0.75
2.3
0.9
1.55.5
(3) Emitter
(2) Collector
(1) Base
ROHM : CPT3
EIAJ : SC-63
5.1


zPackaging specifications and hFE
Type 2SD2318
CPT3
UV
TL
2500
Package
hFE
Code
Basic ordering unit (pieces)





zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
80
60
6
−
−
−
−
−
−
−
−
−
−
−
50
60
−
−
100
100
1.0
−
−
V
V
V
µA
µA
V
MHz
∗pF
IC=50µA
IC=1mA
IE=50µA
VCB=80V
VEB=6V
IC/IB=2A/0.05A
VBE(sat) −−1.5 V
∗
∗IC/IB=2A/0.05A
hFE 560 − 1800 − VCE/IC=4V/0.5A
VCE=5V, IE=−0.2A, f=10MHz
VCB=10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Base-emitter saturation voltage
DC current transfer ratio
−
∗Measured using pulse current.