2SC5305
器件描述：Inverter Lighting Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：42.4KB，共4页
Sponsor by e络盟器件资料摘要：
O3101TS KT/61598TS (KOTO) TA-1239 No.5884-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Inverter Lighting Applications
Ordering number:ENN5884A
2SC5305LS
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2079D
[2SC5305]
Features
· High breakdown voltage (V
CBO
=1200V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
˚C
Tc=25˚C
˚C
Electrical Characteristics at Ta=25˚C
SANYO:TO-220FI (LS)
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
0021V
egatloVrettimE-ot-rotcello
OEC
006V
egatloVesaB-ot-rettimEV
OBE
9V
tnerruCrotcelloCI
C
6A
)eslup(tnerruCrotcello
PC
21A
noitapissiDrotcelloCP
C
2W
53W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnotidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V006=
E
0=01Aµ
tnerruCffotuCrotcello
SEC
V
EC
R,V0021=
EB
0 .1Am
egatloVnoitarutaSrotcelloCV
)sus(OEC
I
C
I,Am001=
B
0 06V
tnerruCffotuCrettimEI
OBE
V
BE
I,V9=
C
0 .1Am
egatloVnoitarutaSrettimE-ot-rotcello
)tas(EC
I
C
I,A0.3=
B
A6.0 .1V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB
I
C
I,A0.3=
B
A6.0=5.1V
niaGtnerruCCD
h
EF
1V
EC
I,V5=
C
A3.0=030405
h
EF
2V
EC
I,V5=
C
A5.2 1
emiTegarotSt
gts
I
C
I,A5.3=
1B
I,A6.0=
2B
A2.1– .2sµ
emiTllaFt
f
I
C
I,A5.3=
1B
I,A6.0=
2B
A2.1– 1.0sµ
1:Base
2:Collector
3:Emitter
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
123
10.0
3.2
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Inverter Lighting Applications
Ordering number:ENN5884A
2SC5305LS
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2079D
[2SC5305]
Features
· High breakdown voltage (V
CBO
=1200V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
˚C
Tc=25˚C
˚C
Electrical Characteristics at Ta=25˚C
SANYO:TO-220FI (LS)
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
0021V
egatloVrettimE-ot-rotcello
OEC
006V
egatloVesaB-ot-rettimEV
OBE
9V
tnerruCrotcelloCI
C
6A
)eslup(tnerruCrotcello
PC
21A
noitapissiDrotcelloCP
C
2W
53W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnotidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V006=
E
0=01Aµ
tnerruCffotuCrotcello
SEC
V
EC
R,V0021=
EB
0 .1Am
egatloVnoitarutaSrotcelloCV
)sus(OEC
I
C
I,Am001=
B
0 06V
tnerruCffotuCrettimEI
OBE
V
BE
I,V9=
C
0 .1Am
egatloVnoitarutaSrettimE-ot-rotcello
)tas(EC
I
C
I,A0.3=
B
A6.0 .1V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB
I
C
I,A0.3=
B
A6.0=5.1V
niaGtnerruCCD
h
EF
1V
EC
I,V5=
C
A3.0=030405
h
EF
2V
EC
I,V5=
C
A5.2 1
emiTegarotSt
gts
I
C
I,A5.3=
1B
I,A6.0=
2B
A2.1– .2sµ
emiTllaFt
f
I
C
I,A5.3=
1B
I,A6.0=
2B
A2.1– 1.0sµ
1:Base
2:Collector
3:Emitter
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
123
10.0
3.2