TECHNICAL DATA

P-CHANNEL J-FET
Qualified per MIL-PRF-19500/476
Devices Qualified
Level
2N5114 2N5115 2N5116




JAN
JANTX
JANTXV

ABSOLUTE MAXIMUM RATINGS (TC =+250C unless otherwise noted)
Parameters / Test Conditions Symbol All Devices Unit
Gate - Source Voltage (1) V GS 30 Vdc
Drain - Source Voltage (1) V DS 30 Vdc
Drain - Gate Voltage V DG 30 Vdc
Gate Current I G 50 mAdc
Power Dissipation T A = +25 0 C (2) P T 0.500 W
Storage Temperature Range T stg - 65 to +200 0 C
(1) Symm etrical geometry allows operation of those units with source/drain leads interchanged.
(2) Derate linearly 3.0 mW/ 0 C for T A > 25 0 C.




TO - 18*
(TO - 206AA)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Units
Gate - Source Breakdown Voltage
V DS = 0, I G = 1.0 µAdc V (BR)GSS 30 Vdc
Drain - Source “On” State Voltage
V GS = 0 Vdc, I D = - 15 mAdc 2N5114
V GS = 0 Vdc, I D = - 7.0 mAdc 2N5115
V GS = 0 Vdc, I D = - 3.0 mAdc 2N5116
V DS(on)

1.3
0.8
0.6
Vdc
Gate Reverse Current
V DS = 0, V GS = 20 Vdc I GS S 500 pAdc
Drain Current Cutoff
V GS = 12 Vdc, V DS = - 15 Vdc 2N5114
V GS = 7.0 Vdc, V DS = - 15 Vdc 2N5115
V GS = 5.0 Vdc, V DS = - 15 Vdc 2N5116
I D(off)

- 500
- 500
- 500

pAdc
pAdc
pAdc

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