2SK3868
2004-07-01 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI)
2SK3868

Switching Regulator Applications


• Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.)
• High forward transfer admittance: |Yfs| = 3S (typ.)
• Low leakage current: IDSS = 100 μ A (VDS = 500 V)
• Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 500 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 5
Drain current Pulse (t = 1 ms)
(Note 1) IDP 20
A
Drain power dissipation (Tc = 25°C) PD 35 W
Single pulse avalanche energy
(Note 2) EAS 180 mJ
Avalanche current IAR 5 A
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 12.2 mH, IAR = 5 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.


Unit: mm

1: Gate
2: Drain
3: Source


JEDEC ?
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
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