2SA2063 / 2SC5775
No.6988-1/4
Features
•
Large current capacitance.
• Wide ASO and high durability against breakdown.
• Adoption of MBIT process.
Specifications Note*( ) : 2SA2063
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(-)180 V
Collector-to-Emitter Voltage V
CEO
(-)160 V
Emitter-to-Base Voltage V
EBO
(-)6 V
Collector Current I
C
(-)12 A
Collector Current (Pulse) I
CP
(-)24 A
Collector Dissipation P
C
2.5 W
Tc=25°C130
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=(--)180V, I
E
=0 (--)0.1 mA
Emitter Cutoff Current I
EBO
V
EB
=(--)4V, I
C
=0 (--)0.1 mA
DC Current Gain
h
FE
(1) V
CE
=(--)5V, I
C
=(--)1A 60 160
h
FE
(2) V
CE
=(--)5V, I
C
=(--)6A 35
Gain-Bandwidth Product f
T
V
CE
=(--)5V, I
C
=(--)1A (10)15 MHz
Output Capacitance Cob V
CB
=(--)10V, f=1MHz (340)170 pF
Base-to-Emitter Voltage V
BE
V
CE
=(--)5V, I
C
=(--)6A 1.5 V
Collector-to-Emitter Saturation Voltage V
CE
(sat) I
C
=(--)6A, I
B
=(--)0.6A (--0.3)0.2 (--)2.0 V
Collector-to-Base Breakdown Voltage V
(BR)CBO
I
C
=(--)5mA, I
E
=0 (--)180 V
Collector-to-Emitter Breakdown Voltage V
(BR)CEO
I
C
=(--)50mA, R
BE
=∞ (--)160 V
Emitter-to-Base Breakdown Voltage V
(BR)EBO
I
E
=(--)5mA, I
C
=0 (--)6 V
Turn-On Time t
on
See specified test circuit. (0.45)0.56 µs
Storage Time t
stg
See specified test circuit. (1.75)3.3 µs
Fall Time t
f
See specified test circuit. (0.25)0.4 µs
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6988A
D1503 TS IM TA-100928 / 62501 TS IM TA-3319, 3320
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2063 / 2SC5775
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
160V / 12A, AF90W
Output Applications