DESCRIPTION
　 2SC5726 is a mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for high frequency application.
　 .

FEATURE
● High gain bandwidth product.
fT=10.0GHz
● High gain, low noise.
● Can operate at low voltage.
● Super mini package for easy mounting
APPLICATION
For TV tuners, high frequency amplifier , celluar phone system.
〈 SMALL-SIGNAL TRANSISTOR 〉
PRELIMINARY 2SC5726
Notics :This is not a final specification. FOR HIGH FREQUENCY AMPLIFY APPLICATION
Some parametric limits are subject to change. 　 SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING Unit：ｍｍ
MAXIMUM RATINGS （ Ta=25 ℃）
Symbol Parameter Ratings Unit
VCBO Collector to Base voltage 15 V
VCEO Collector to Emitter voltage 6 V
VEBO Emitter to Base voltage 1.5 V
I O Collector current 50 mA
Pc Collector dissipation 150 mW
Tj Junction temperature ＋ 125 ℃
Tstg Storage temperature -55～＋ 125 ℃
ELECTRICAL CHARACTERISTICS （ Ta=25 ℃）
Limits
Parameter Symbol Test conditions
Min Typ Max
Unit
Collector cut off current ICBO V CB =10V, I E=0mA - - 1.0 μ A
Emitter cut off current IEBO V EB=1V, I C=0mA - - 1.0 μ A
DC forward current gain hFE V CE=3V, I C=10mA 　 30 - 250
Gain bandwidth product fT V CE=3V, I E=10mA - 10.0 - GHz
Collector output capacitance Cob V CB =3V, I E=0mA,f=1MHz - 0.7 - pF
Insertion power gain |S 21| 2 V CE=3V, I C=10mA,f=1GHz 10.0 13.0 - dB
Noise figure NF V CE=3V, I C=5mA,f=1GHz - 1.4 - dB
JEITA ： SC-59
TERMINAL CONNECTER
① ： BASE
② ： EMITTER
③ ： COLLECTOR
0～
0.1
0.81.1
0.4
0.51.50.5
2.5
0.95
0.95
1.902.9
①
② ③
ISAHAYA　 ELECTRONICS　 CORPORATION