AMMC-6231
器件描述：16?2 GHz Low Noise Amplifier
器件厂商：HP [Agilent(Hewlett-Packard)]
文件大小：954.51KB，共8页
Sponsor by e络盟器件资料摘要：
Agilent AMMC-6231
16–32 GHz Low Noise Amplifier
Data Sheet
Features
• Wide frequency range: 16 - 32 GHz
• High gain: 22 dB
• Low 50 Ω Noise Figure: 2.6 dB
• 50 Ω Input and Output Match
• Flat Gain Response
• Single 3V Supply Bias
Applications
• Microwave Radio systems
• Satellite VSAT, DBS Up/Down
Link
• LMDS & Pt-Pt mmW Long Haul
• Broadband Wireless Access
(including 802.16 and 802.20
WiMax)
• WLL and MMDS loops
• Commercial Grade Military
Description
Agilent’s AMMC-6231 is a high
gain, low-noise amplifier that
operates from 16 GHz to 32
GHz. This LNA provides a
wide-band solution for system
design since it covers several
bands, thus, reduces part
inventory. The device has
input / output match to 50
Ohm, is unconditionally stable
and can be used as either
primary or sub-sequential low
noise gain stage. By
eliminating the complex tuning
and assembly processes
typically required by hybrid
(discrete-FET) amplifiers, the
AMMC-6231 is a cost-effective
alternative in the 16 - 32 GHz
communications receivers. The
backside of the chip is both
RF and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. It is fabricated in a
PHEMT process to provide
exceptional noise and gain
performance.
AMMC-6231 Absolute Maximum Ratings
[1]
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved
carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when
handling these devices. For more details, refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Chip Size: 1900 x 800 mm (74.8 x 31.5 mils)
Chip Size Tolerance: ± 10mm (± 0.4 mils)
Chip Thickness: 100 ± 10mm (4 ± 0.4 mils)
RF Pad Dimensions: 110 x 90 mm (4.33 x 3.54 mils)
DC Pad Dimensions: 100 x 100 mm (3.94 x 3.94 mils)
Symbol Parameters/Conditions Units Min. Max.
V
d
Positive Drain Voltage V 7
V
g
Gate Supply Voltage V NA
I
d
Drain Current mA 100
P
in
CW Input Power dBm 15
T
ch
Operating Channel Temp. °C +150
T
stg
Storage Case Temp. °C -65 +150
T
max
Maximum Assembly Temp (60 sec max) °C +300
16–32 GHz Low Noise Amplifier
Data Sheet
Features
• Wide frequency range: 16 - 32 GHz
• High gain: 22 dB
• Low 50 Ω Noise Figure: 2.6 dB
• 50 Ω Input and Output Match
• Flat Gain Response
• Single 3V Supply Bias
Applications
• Microwave Radio systems
• Satellite VSAT, DBS Up/Down
Link
• LMDS & Pt-Pt mmW Long Haul
• Broadband Wireless Access
(including 802.16 and 802.20
WiMax)
• WLL and MMDS loops
• Commercial Grade Military
Description
Agilent’s AMMC-6231 is a high
gain, low-noise amplifier that
operates from 16 GHz to 32
GHz. This LNA provides a
wide-band solution for system
design since it covers several
bands, thus, reduces part
inventory. The device has
input / output match to 50
Ohm, is unconditionally stable
and can be used as either
primary or sub-sequential low
noise gain stage. By
eliminating the complex tuning
and assembly processes
typically required by hybrid
(discrete-FET) amplifiers, the
AMMC-6231 is a cost-effective
alternative in the 16 - 32 GHz
communications receivers. The
backside of the chip is both
RF and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. It is fabricated in a
PHEMT process to provide
exceptional noise and gain
performance.
AMMC-6231 Absolute Maximum Ratings
[1]
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved
carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when
handling these devices. For more details, refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Chip Size: 1900 x 800 mm (74.8 x 31.5 mils)
Chip Size Tolerance: ± 10mm (± 0.4 mils)
Chip Thickness: 100 ± 10mm (4 ± 0.4 mils)
RF Pad Dimensions: 110 x 90 mm (4.33 x 3.54 mils)
DC Pad Dimensions: 100 x 100 mm (3.94 x 3.94 mils)
Symbol Parameters/Conditions Units Min. Max.
V
d
Positive Drain Voltage V 7
V
g
Gate Supply Voltage V NA
I
d
Drain Current mA 100
P
in
CW Input Power dBm 15
T
ch
Operating Channel Temp. °C +150
T
stg
Storage Case Temp. °C -65 +150
T
max
Maximum Assembly Temp (60 sec max) °C +300