VISHAY
BAR64V-05
Document Number 85695
Rev. 1.2, 26-Apr-04
Vishay Semiconductors
www.vishay.com
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RF PIN Diodes - Dual, Common Cathode in SOT-23
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-05 was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (rf) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for this PIN Diodes are
switches and attenuators in wireless, mobile and TV-
systems.
Features
• High reverse Voltage
Small reverse capacitance
High breakdown voltage
Applications
For frequency up to 3 GHz
RF-signal tuning
Signal attenuator and switches
Mobile , wireless and TV-Applications
Mechanical Data
Case: Plastic case (SOT-23)
Weight: approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Part Ordering code Marking Remarks
BAR64V-05 BAR64V-05-GS18 or BAR64V-05-GS08 D5 Tape and Reel
Parameter Test condition Symbol Value Unit
Reverse voltage V
R
100 V
Forward current I
F
100 mA
Junction temperature T
j
150 °C
Storage temperature range T
stg
- 55 to + 150 °C
Parameter Test condition Symbol Min Typ. Max Unit
Reverse voltage I
R
= 10 µAV
R
100 V
Reverse current V
R
= 50 V I
R
50 nA
Forward voltage I
F
= 50 mA V
F
1.1 V