TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices Qualified Level
2N1711 2N1890




JAN
JANTX

MAXIMUM RATINGS
Ratings Symbol 2N1711 2N1890 Unit
Collector - Base Voltage V CBO 75 100 Vdc
Emitter - Base Voltag e V EBO 7.0 Vdc
Collector Current I C 500 mAdc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +25 0 C (2) P T
0.8
3.0
W
W
Operating & Storage Junction Temperature Range T J , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Impedance Z θJX 58 0 C/W
1) Derate linearly 4.57 mW/ 0 C for T A > 25 0 C
2) Derate linearly 17.2 mW/ 0 C for T C > 25 0 C






TO - 5*
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Base Breakdown Voltage
I C = 100 µAdc 2N1711, S
2N1890, S

V (BR) CBO

75
100

Vdc
Collector - Emitter Breakdown Voltage
R BE = 10 Ω, I C = 100 mAdc 2N1711, S
2 N1890, S

V (BR) CER

50
80

Vdc
Collector - Emitter Breakdown Voltage
I C = 30 mAdc 2N1711, S
2N1890, S

V (BR) CEO

30
60

Vdc
Emitter - Base Breakdown Voltage
I E = 100 µAdc

V (BR) EBO

7.0

Vdc
Collector - Base Cutoff Current
V CB = 60 Vdc 2N1711
V CB = 80 Vdc 2N1890

I CBO


10
10

ηAdc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc I EBO 5.0 ηAdc
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