Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Typ Max
78 110
106 150
R
θJL
64 80
-12
±20Gate-Source Voltage
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
W
3.1
2.4
12
1.15
0.73
-2.1
-2.7
1.15
0.73
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
30 -30
±20
Drain-Source Voltage
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Steady-State
°C/W
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
-55 to 150-55 to 150
Maximum Junction-to-Lead
C
Steady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
AO6602
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 3.1A (V
GS
= 10V) -2.7A (V
GS
= -10V)
R
DS(ON)
< 75mΩ (V
GS
= 10V) < 100mΩ(V
GS
= -10V)
< 115mΩ (V
GS
= 4.5V) < 180mΩ(V
GS
= -4.5V)
General Description
The AO6602 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6602 is Pb-free (meets ROHS &
Sony 259 specifications). AO6602L is a Green
Product ordering option. AO6602 and AO6602L are
electrically identical.
G1
D1
S1
G2
D2
S2
n-channel p-channel
TSOP6
Top View
G2
S2
G1
D2
S1
D1
1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.