1/10February 2002
STB9NC60
STB9NC60-1
N-CHANNEL 600V - 0.6Ω - 9A - D
2
PAK/I
2
PAK
PowerMesh™II MOSFET
(1)I
SD
≤9A, di/dt ≤100A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
a73 TYPICAL R
DS
(on) = 0.6 Ω
a73 EXTREMELY HIGH dv/dt CAPABILITY
a73 100% AVALANCHE TESTED
a73 NEW HIGH VOLTAGE BENCHMARK
a73 GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
a73 HIGH CURRENT, HIGH SPEED SWITCHING
a73 SWITH MODE POWER SUPPLIES (SMPS)
a73 DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STB9NC60
STB9NC60-1
600 V
600 V
< 0.75 Ω
< 0.75 Ω
9.0 A
9.0 A
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0) 600 V
V
DGR
Drain-gate Voltage (R
GS
= 20 kΩ) 600 V
V
GS Gate- source Voltage ±30 V
I
D
Drain Current (continuos) at T
C
= 25°C 9A
Drain Current (continuos) at T
C
= 100°C 5.7 A
I
DM
(1) Drain Current (pulsed) 36 A
P
TOT
Total Dissipation at T
C
= 25°C 125 W
Derating Factor 1.0 W/°C
dv/dt Peak Diode Recovery voltage slope 3.5 V/ns
T
stg
Storage Temperature
– 55 to 150 °C
T
j
Max. Operating Junction Temperature
D
2
PAK I
2
PAK
1
3
1
2
3
INTERNAL SCHEMATIC DIAGRAM