1
.
9
0
.
9
5
0
.
9
5
2
.
9
0
.
4
1. 3
2. 4
1
.
0


SOT-23 Plastic-Encapsulate Transistors


AV9018LT1 TRANSISTOR (NPN)

FEATURES

Power dissipation
P
CM:
0.2 W (Tamb=25℃)
Collector current
I
CM:
0.05 A
Collector-base voltage
V
(BR)CBO
: 25 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100µA, I
E
=0 25 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 18 V
Emitter-base breakdown voltage V(BR)EBO I
E
=100µA, I
C
=0 4 V
Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA
Collector cut-off current ICEO VCE=15V, IB=0 0.1 µA
Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 µA
DC current gain hFE(1) VCE=5V, IC= 1mA 70 190
Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=10mA, IB= 1mA 1.4 V
Transition frequency f
T

V
CE
=5V, I
C
= 5mA
f=400MHz
600 MHz

DEVICE MARKING S9018LT1= J8


























Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR