Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 5 February 2006
AP504
DCS-band 4W HBT Amplifier Module Product Information
The Communications Edge
TM
Product Features
• 1705 – 1790 MHz
• 33 dB Gain
• +25 dBm CDMA2k 7fa Power
(-63 dBc ACPR)
• +12 V Single Supply
• Power Down Mode
• Bias Current Adjustable
• RoHS-compliant flange-mount pkg

Applications
• Final stage amplifiers for Repeaters
• Optimized for driver amplifier PA
mobile infrastructure


Product Description
The AP504 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 33 dB gain. The module has been
internally optimized for linearity to provide +25 dBm (-63
dBc ACPR) linear power for 7-carrier CDMA2000
applications.

The AP504 uses a high reliability InGaP/GaAs HBT
process technology and does not require any external
matching components. The module operates off of a +12V
supply and does not requiring any negative biasing voltages;
an internal active bias allows the amplifier to maintain high
linearity over temperature. It has the added feature of a
+5V power down control pin. While the module has been
tuned for optimal performance for Class AB applications,
the quiescent current can also be adjusted for Class B
applications through an external resistor. A low-cost metal
housing allows the device to have a low thermal resistance
and achieves over 100 years MTTF. All devices are 100%
RF and DC tested.

The AP504 is targeted for use as a driver or final stage
amplifier in wireless infrastructure where high linearity and
high power is required. This combination makes the device
an excellent candidate for next generation multi-carrier 3G
base stations using the DCS1800 frequency band.

Functional Diagram

Top View

Pin No. Function
1 RF Output
2 / 4 Vcc
3 / 5 Vpd
6 RF Input
Case Ground

Specifications
(1)
25 ºC, V
cc
=12V, V
pd
=5V, I
cq
=835mA, R7=0Ω, 50Ω unmatched fixture
Parameter Units Min Typ Max Test Conditions
Operational Bandwidth MHz 1705 – 1790
Test Frequency MHz 1765
Adjacent Channel Power Ratio dBc -63.2 -61 CDMA2000 7fa 25 dBm Total Power, 885 kHz offset
Power Gain dB 30.5 33 35.5 Pout = +25 dBm
Input Return Loss dB 11
Output Return Loss dB 5
Output P1dB dBm +36
Output IP3 dBm +52 Pout = +23 dBm/tone, Δf = 1 MHz
Operating Current
(2)
mA 790 850 940 Pout = +25 dBm
Quiescent Current, Icq
(2)
mA 780 835 920
Device Voltage, Vcc V +12
Device Voltage, Vpd V +5 Pull-down voltage: 0V = “OFF”, 5V=”ON”
Load Stability VSWR 10:1

1. Test conditions unless otherwise noted: 25ºC.
2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).



Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 °C
Storage Temperature -55 to +150 °C
RF Input Power (continuous)
with output terminated in 50 Ω
+15 dBm

Operation of this device above any of these parameters may cause permanent damage.

Ordering Information
Part No. Description
AP504 DCS-band 4W HBT Amplifier Module
AP504-PCB
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=835mA)
1 2 3 4 5 6