A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 40 mA 26 V
BVCBO IC = 10 mA 45 V
BVEBO IE = 10 mA 4.0 V
hFE VCE = 5.0 V IC = 250 mA 10 ---
Cob VCB = 28 V f = 1.0 MHz 8.0 pF
PG
Po = 2.0 W SOUND CARRIER = -10 dB
VISION CARRIER = -8.0 dB CHROMA = 16 dB
VCE = 25 V IC = 410 mA f = 860 MHz
10 12 dB
IMD3
Po = 2.0 W SOUND CARRIER = -10 dB
VISION CARRIER = -8.0 dB CHROMA = 16 dB
VCE = 25 V IC = 410 mA f = 860 MHz
-60 dBc
NPN SILICON RF POWER TRANSISTOR
TPV593
DESCRIPTION:
The ASI TPV593 is a Common
Emitter Device Designed for Class A
High Linearity Television Band IV and
V Transmitter Applications.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain
MAXIMUM RATINGS
IC 1.2 A
VCB 45 V
PDISS 17.5 W @ TC = 25 OC
TJ -55 OC to +200 OC
TSTG -55 OC to +200 OC
qJC 10 OC/W
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER