3415B–FLASH–12/03
Features
Single-voltage Operation
–5V Read
– 5V Reprogramming
Fast Read Access Time – 45 ns
Internal Program Control and Timer
8K Word Boot Block with Lockout
Fast Erase Cycle Time – 1.5 seconds
Word-by-word Programming – 10 µs/Word Typical
Hardware Data Protection
Data Polling for End of Program Detection
Small 10 x 14 mm VSOP Package
Typical 10,000 Write Cycles
Description
The AT49F1024A is a 5-volt-only in-system Flash memory organized as 65,536 words
by 16 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
devices offer access times to 45 ns with power dissipation of just 275 mW over the
commercial temperature range. When the device is deselected, the CMOS standby
current is less than 100 µA.
To allow for simple in-system reprogrammability, the AT49F1024A does not require
high-input voltages for programming. Five-volt-only commands determine the read
1-megabit
(64K x 16)
5-volt Only
Flash Memory
AT49F1024A
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49F1024A is performed by erasing a
block of data (entire chip or main memory block) and then programming on a word-by-
word basis. The typical word programming time is a fast 10 µs. The end of a program
cycle can be optionally detected by the Data Polling feature. Once the end of a byte
program cycle has been detected, a new access for a read or program can begin. The
typical number of program and erase cycles is in excess of 10,000 cycles.
Pin Configurations
Pin Name Function
A0 - A15 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O15 Data Inputs/Outputs
NC No Connect
VSOP Top View
Type 1
10 x 14 mm
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A9
A10
A11
A12
A13
A14
A15
NC
WE
VCC
NC
CE
I/O15
I/O14
I/O13
I/O12
I/O11
I/O10
I/O9
I/O8
GND
A8
A7
A6
A5
A4
A3
A2
A1
A0
OE
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND