TECHNICAL DATA

PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/461
Devices Qualified Level
2N6211 2N6212 2N6213




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N6211 2N6212 2N6213 Unit
Collector - Emitter Voltage V CEO 225 30 0 350 Vdc
Collector - Base Voltage V CBO 275 350 400 Vdc
Emitter - Base Voltage V EBO 6.0 Vdc
Base Current I B 1.0 Adc
Collector Current I C 2.0 Adc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +25 0 C (2) P T
3.0
35
W
W
Operating & Stora ge Temperature T op , T stg - 55 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance Junction - to - Case R θJC 5.0 0 C/W
1) Derate linearly 17.1 mW/ 0 C for T A > +25 0 C
2) Derate linearly 200 mW/ 0 C for T C > +25 0 C






TO - 66*
(TO - 213AA)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 200 mAdc, f = 30 - 60 Hz 2N6211
2N6212
2N621 3

V (BR) CEO

225
300
350


Vdc
Collector - Emitter Breakdown Voltage
I C = 200 mAdc, f = 30 - 60 Hz, R BE = 50 Ω 2N6211
2N6212
2N6213

V (BR) CER

250
325
375


Vdc
Collector - Emitter Breakdown Voltage
I C = 200 mAdc, f = 30 - 60 Hz, R BE = 50 Ω, V BE = - 1.5 Vdc
2N6211
2N6212
2N6213

V (BR) CEX


275
350
400


Vdc

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