BB303M
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-697A (Z)
2nd. Edition
Nov. 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4 (SOT-143 var.)
Outline
Notes: 1. Marking is “CW–”.
2. BB303M is individual type number of HITACHI BBFET.
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDS 7 V
Gate1 to source voltage VG1S – 0/ +7 V
Gate2 to source voltage VG2S – 0/ +7 V
Drain current ID 25 mA
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C