Specifications and information are subject to change without notice.

WJ Communications, Inc a0 Phone 1-800-WJ1-4401 a0 FAX: 408-577-6621 a0 e-mail: sales@wj.com a0 Web site: www.wj.com Page 1 of 5 November 2005
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information
The Communications Edge TM
Product Features
x 1800 – 2200 MHz
x 26 dB Gain
x +30 dBm P1dB
x +46 dBm Output IP3
x +5V Single Positive Supply
x Internal Active Bias
x Lead-free/green/RoHS-compliant
SOIC-8 Package

Applications
x Mobile Infrastructure

Product Description
The AH212 is a high dynamic range two-stage driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +30 dBm of compressed 1-dB
power. The amplifier is housed in an industry-standard
SMT lead-free/green/RoHS-compliant SOIC-8 package.
All devices are 100% RF and DC tested.

The product is targeted for use as linear driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH212 to maintain high
linearity over temperature and operate directly off a +5 V
supply.

Functional Diagram


AH212-S8G

Function Pin No.
Vc1 1
Input 3
Output 6, 7
Vbias1 2
Vbias2 4
Vcc2 6, 7
GND Backside Paddle
N/C or GND 5, 8

Specifications (1)
Parameters Units Min Typ Max
Operational Bandwidth MHz 1800 2200
Test Frequency MHz 2140
Gain dB 25
Input Return Loss dB 25
Output Return Loss dB 9
Output P1dB dBm +29.5
Output IP3 (2) dBm +46
Noise Figure dB 6.0
W-CDMA Channel Power
@ -45 dBc ACLR dBm +21
Operating Current Range , Icc mA 400
Device Voltage, Vcc V 5

1. Test conditions unless otherwise noted: 25ºC, +5V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.





Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 qC
Storage Temperature -65 to +150 qC
RF Input Power (continuous) +26 dBm
Device Voltage +7 V
Device Current 900 mA
Device Power 6 W
Junction Temperature +250 ºC

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance (1)
Parameters Units Typical
Frequency MHz 1960 2140
Gain dB 25.8 25.0
Input Return Loss dB 15 25
Output Return Loss dB 11 9
Output P1dB dBm +30 +29.5
Output IP3 dBm +48.5 +46
IS-95A Channel Power
@ -45 dBc ACPR dBm +23.5
W-CDMA Channel Power
@ -45 dBc ACLR dBm +21
Noise Figure dB 5.5 6.0
Supply Bias +5 V @ 400 mA










Ordering Information
Part No. Description
AH212-S8G 1 Watt, High Gain InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOIC-8 Package)

AH212-S8PCB1960 1960 MHz Evaluation Board
AH212-S8PCB2140 2140 MHz Evaluation Board
1
2
3
4
8
7
6
5


N/C
Vcc2 / RF Out
N/C
Vcc2 / RF Out
Vc1
Vbias1
RF In
Vbias2