AS221-306
器件描述:PHEMT GaAs IC High Power SP4T Switch 0.1 - 2.5 GHz
文件大小:65.41KB,共2页
Sponsor by e络盟
器件资料摘要:
Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com 1
Specifications subject to change without notice. 10/02A
PHEMT GaAs IC High Power
SP4T Switch 0.1–2.5 GHz
Features
■ 4 Symmetric RF Paths
■ Positive Voltage Control @ 2.6 V
■ High IP3
■ Excellent Harmonic Performance
■ Handles GSM Power Levels
■ Available in MLF-16 (4 x 4 mm) Package
QFN-16 (4 x 4 mm)
AS221-306
0.001
(0.025 mm)
SEATING
PLANE
0.039 (1.00 mm) MAX.
16
0.157
(4.00 mm)
SQ. BSC
1
PIN 1
INDICATOR
0.011 (0.28 mm)
+ 0.003 (0.07 mm)
- 0.002 (0.05 mm)
0.15 (2.10 mm)
0.006 (0.083 mm)
0.083 (2.10 mm)
4 x 0.016 (0.40 mm)
0.078 (1.95 mm) REF.
0.078 (1.95 mm) REF.
0.024 (0.60 mm)
+ 0.006 (0.15 mm)
- 0.004 (0.10 mm)
0.026 (0.65 mm) BSC
Description
The AS221-306 is a reflective SP4T switch. It is an ideal
switch for higher power applications. It can be used for
GSM dual-band handset applications where both low loss,
low current and small size are critical parameters.
Parameter Frequency Min. Typ. Max. Unit
Insertion Loss Ant-J
1
, J
2
, J
3
, J
4
0.1–0.5 GHz 0.6 0.7 dB
0.5–1.0 GHz 0.7 0.8 dB
1.0–2.0 GHz 0.9 1.1 dB
2.0–2.5 GHz 1.1 1.2 dB
Isolation Ant-J
1
, J
2
, J
3
, J
4
0.1–0.5 GHz 30 34 dB
0.5–1.0 GHz 25 29 dB
1.0–2.0 GHz 19 23 dB
2.0–2.5 GHz 18 22 dB
VSWR 0.1–1.0 GHz 1.2:1
1.0–2.5 GHz 1.3:1
Electrical Specifications at 25°C (0, +2.6 V)
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 50 ns
On, Off (50% CTL to 90/10% RF) 100 ns
Video Feedthru 50 mV
IP3 13 dBm/Tone +55 dBm
2nd and 3rd Harmonics 34 dBm Input 900 MHz +65 dBc
Control Voltages V
Low
= 0
V
High
= 2.6 V @ 200 µA
Operating Characteristics at 25°C (0, +2.6 V)