Transistors
1
Publication date: November 2004 SJC00322AED
2SB1734
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2706
■ Features
• High forward current transfer ratio h
FE
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−50 V
Collector-emitter voltage (Base open) V
CEO
−50 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−200 mA
Peak collector current I
CP
−400 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −50 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −2 mA, I
B
= 0 −50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Forward current transfer ratio h
FE
V
CE
= −10 V, I
C
= −2 mA 85 500 
Collector-emitter saturation voltage V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA −300 mV
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 3 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: AF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.