TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices Qualified Level
2N720A 2N1893 2N1893S




JAN
JANTX
JANTXV


MAXIMUM RATINGS
Ratings Symbol All Devices Units
Collector - Emitter Voltage V CEO 80 Vdc
Collec tor - Base Voltage V CBO 120 Vdc
Emitter - Base Voltage V EBO 7.0 Vdc
Collector - Emitter Voltage (R BE = 10 Ω) V CER 100 Vdc
Collector Current I C 500 mAdc
2N720A 2N1893, S
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +25 0 C (2) P T
0.5
1.8
0.8
3.0 W
Operating & Storage Junction Temperature Range T J , T srg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol 2N720A 2N1893, S Unit
Thermal Resistance, Junction - to - Case R θJC 97 58 0 C/W
1) Derate linearly 2 .86 mW/ 0 C for 2N720A, 4.57 mW/ 0 C for 2N1893, S T A > 25 0 C
2) Derate linearly 10.3 mW/ 0 C for 2N720A, 17.2 mW/ 0 C for 2N1893, S T C > 25 0 C



TO-18 (TO-206AA)*
2N720A


TO-5*
2N1893, 2N1893S
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 30 mAdc V (BR) CEO 80 Vdc
Collector - Emitter Breakdown Voltage
I C = 10 mAdc, R BE = 10 Ω V (BR) CER 100 Vdc
Colle ctor - Base Cutoff Current
V CB = 120 Vdc
V CB = 90 Vdc
I CBO

10
10
µAdc
ηAdc
Emitter - Base Cutoff Current
V EB = 7.0 Vdc
V EB = 5.0 Vdc
I EBO

10
10
µAdc
ηAdc

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