TECHNICAL DATA

NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/262
Devices Qualified Level
2N1722 2N1724




JAN
JANTX

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector - Emitter Voltage V CEO 80 Vdc
Collector - Base Voltage V CBO 175 Vdc
Emitter - Base Voltage V EBO 10 Vdc
Collector Current I C 5.0 Adc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +100 0 C (2)
P T 3.0
50
W
W
Temperature Range: Operating
Storage Junction
T OP ,
T stg
175
- 65 to +200
0 C
1) Derate linearly 20 mW/ 0 C for T A between +25 0 C and +175 0 C
2) Derate linearly 666 mW/ 0 C for T C between +100 0 C and +175 0 C


TO - 61*
2N1724

TO - 53*
2N1722
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 200 mAdc V (BR) CEO 80 Vdc
Emitter - Base Breakdown Voltage
I E = 10 mAdc V (BR) EBO 10 Vdc
Collector - Emitter Cutoff Current
V CE = 60 Vdc I CES 300 µAdc
Collector - Base Cutoff Cu rrent
V CB = 175 Vdc I CBO 5.0 mAdc
Emitter - Base Cutoff Current
V EB = 7.0 Vdc I EBO 400 µAdc

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