2SK3737
器件描述：FM Tuner, VHF Amplifier Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：39.27KB，共4页
Sponsor by e络盟器件资料摘要：
2SK3737
No.8390-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8390
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
71505AD MS IM TB-00001592
2SK3737
N-Channel Silicon MOSFET
FM Tuner, VHF Amplifier Applications
Features
• Low noise.
•
High power gain.
•
Small reverse transfer capacitance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DS
15 V
Gate-to-Source Voltage V
GS
±5V
Drain Current I
D
30 mA
Allowable Power Dissipation P
D
150 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Voltage V
DSX
V
GS
=--4V, I
D
=100µA15V
Gate-to-Source Leakage Current I
GSS
V
DS
=0V, V
GS
=±5V ±10 nA
Zero-Gate Voltage Drain Current I
DSS
V
DS
=10V, V
GS
=0V 6.0* 12* mA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=100µA --2.2 V
Forward Transfer Admittance
yfs
V
DS
=10V, V
GS
=0V, f=1kHz 11 16 mS
Input Capacitance Ciss V
DS
=10V, V
GS
=0V, f=1MHz 2.4 pF
Reverse Transfer Capacitance Crss V
DS
=10V, V
GS
=0V, f=1MHz 0.035 pF
Power Gain PG
V
DS
=10V, V
GS
=0V, f=100MHz
35 dB
See specified Test Circuit.
Noise Figure NF
V
DS
=10V, V
GS
=0V, f=100MHz
2.0 dB
See specified Test Circuit.
Marking : KA
* : The 2SK3737 is classified by I
DSS
as follows (unit : mA) :
Rank 5 6
I
DSS
6 to 10 8 to 12
No.8390-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8390
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
71505AD MS IM TB-00001592
2SK3737
N-Channel Silicon MOSFET
FM Tuner, VHF Amplifier Applications
Features
• Low noise.
•
High power gain.
•
Small reverse transfer capacitance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DS
15 V
Gate-to-Source Voltage V
GS
±5V
Drain Current I
D
30 mA
Allowable Power Dissipation P
D
150 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Voltage V
DSX
V
GS
=--4V, I
D
=100µA15V
Gate-to-Source Leakage Current I
GSS
V
DS
=0V, V
GS
=±5V ±10 nA
Zero-Gate Voltage Drain Current I
DSS
V
DS
=10V, V
GS
=0V 6.0* 12* mA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=100µA --2.2 V
Forward Transfer Admittance
yfs
V
DS
=10V, V
GS
=0V, f=1kHz 11 16 mS
Input Capacitance Ciss V
DS
=10V, V
GS
=0V, f=1MHz 2.4 pF
Reverse Transfer Capacitance Crss V
DS
=10V, V
GS
=0V, f=1MHz 0.035 pF
Power Gain PG
V
DS
=10V, V
GS
=0V, f=100MHz
35 dB
See specified Test Circuit.
Noise Figure NF
V
DS
=10V, V
GS
=0V, f=100MHz
2.0 dB
See specified Test Circuit.
Marking : KA
* : The 2SK3737 is classified by I
DSS
as follows (unit : mA) :
Rank 5 6
I
DSS
6 to 10 8 to 12