2SC6065
No.8561-1/4
Features
•
High breakdown voltage.
•
High-speed switching.
•
Wide ASO.
•
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
500 V
Collector-to-Emitter Voltage V
CEO
400 V
Emitter-to-Base Voltage V
EBO
8V
Collector Current I
C
1.5 A
Collector Current (Pulse) I
CP
PW≤300µs, duty cycle≤10% 3 A
Base Current I
B
0.7 A
Collector Dissipation P
C
0.9 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=400V, I
E
=0A 10 µA
Emitter Cutoff Current I
EBO
V
EB
=5V, I
C
=0A 10 µA
h
FE
1V
CE
=5V, I
C
=0.1A 20 50
DC Current Gain h
FE
2V
CE
=5V, I
C
=0.7A 10
h
FE
3V
CE
=5V, I
C
=1mA 10
Continued on next page.
Ordering number : EN8561
12006CB MS IM TB-00001637
2SC6065
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications