TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/526
Devices Qualified Level
2N3879




JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol Value Unit
Collector - Emitter Voltage V CEO 75 Vdc
Collector - Base Voltage V CBO 120 Vdc
Emitter - Base Voltage V EBO 7.0 Vdc
Base Current I B 5.0 Adc
Collector Current I C 7.0 Adc
Total Power Dissipation @ T C = 25 0 C (1) P T 35 W
Operating & Storage Junction Temperature Range T J , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 5.0 0 C/W
1) Derate linearly 200 mW/ 0 C for T C > 25 0 C

*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 200 mAdc V (BR) CEO 75 Vdc
Collector - Emitter Cutoff Current
V CE = 50 Vdc I CEO 5.0 Vdc
Collector - Emitter Cutoff Current
V CE = 100 Vdc, V BE = 1.5 Vdc I CEX 4.0 mAdc
Collector - Bas e Cutoff Current
V CB = 120 Vdc I CBO 25 mAdc
Emitter - Base Cutoff Current
V EB = 7.0 Vdc I EBO 10 mAdc

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TO - 66*
(TO - 213AA)