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2N4416A

器件描述:N-CHANNEL J-FET
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:55.21KB,共2页
Sponsor by e络盟
器件资料摘要:
TECHNICAL DATA

N-CHANNEL J-FET
Qualified per MIL-PRF-19500/428
Devices Qualified Level
2N4416A




JAN
JANTX
JANTXV

ABSOLUTE MAXIMUM RATINGS
Parameters / Test Conditions Symbol 2N4416A

Unit
Gate - Source Voltage V GS - 35 Vdc
Drain - Source Vo ltage V DS 35 Vdc
Drain - Gate Voltage V DG 35 Vdc
Gate Current I G 10 mAdc
Power Dissipation T A = +25 0 C (1) P T 300 mWdc
Operating Junction & Storage Temperature Range T op , T stg - 65 to +200 0 C
(1) Derate linearly 1.7 mW/ 0 C for T A > +25 0 C.



TO - 72*
(TO - 206AF)

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Units
Gate - Source Breakdown Voltage
V DS = 0, I G = 1.0 µAdc

V (BR)GSS

- 35

Vdc
Gate Reverse Current
V DS = 0, V GS = 20 Vdc

I GSS

- 0.1

ηAdc
Drain Current
V DS = 15 Vdc

I DSS

5

15

mAdc
Gate - Source Voltage
V DS = 15 Vdc, I D = 0.5 mAdc

V GS

- 1

- 5.5

Vdc
Gate - Source Cutoff Voltage
V DS = 15 Vdc, I D = 1.0 ηAdc

V GS(off)

- 2 .5

- 6.0

Vdc
Gate - Source Forward Voltage
V DS = 0 Vdc, I G = 1.0 mAdc V GSF
1 Vdc


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