2SA2005
Transistors
1/1
For Audio Amplifier output - TV Velosity
Modulation (−160V, −1.5A)
2SA2005


zStructure zExternal dimensions (Unit : mm)
PNP Silicon Epitaxial Planar Transistor
TO-220FN
(1)Base
(2)Collector
(3)Emitter
4.5
2.8
0.75
φ3.2
(2)(3)(1)
0.8
2.54 2.62.54
1.3
1.2
14.0
12.0
8.0
5.0
10.0
15.0


zFeatures
1) Electrical characteristics of DC current gain hFE is flat.
2) High breakdown voltage. (BVCEO= −160V(Min.), at IC= −1mA)
3) High fT. (Typ. 150MHz, at VCE= −10V, IE=0.2A, f=100MHz)
4) Wide SOA.



zApplications zComplements
Power amplifier
Velosity modulation
PNP
2SA2005
NPN
2SC5511

zAbsolute maximum ratings (Ta=25°C) zPackaging specifications and hFE





hFE values are classified as follows:





zElectrical characteristics (Ta=25°C)
Parameter Conditions
Collector-base breakdown voltage IC= −50µA
Collector-emitter breakdown voltage IC= −1mA
Emitter-base breakdown voltage IE= −50µA
Collector cutoff current VCB= −160V
Emitter cutoff current VEB= −4V
Collector-emitter saturation voltage IC/IB= −1A/ −0.1A
DC current gain VCE= −5V, IC= −0.1A
Transition frequency VCE= −10V, IE=0.2A , f=100MHz
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−160
−160
−5
−
−
−
100
−
−
Typ.
−
−
−
−
−
−
−
150
35
Max.
−
−
−
−1.0
−1.0
−1.0
200
−
−
Unit
V
V
V
µA
µA
V
Base-emitter saturation voltage IC/IB= −1A/ −0.1AVBE(sat) −−−1.5 V
−
MHz
pF VCB= −10V , IE=0A , f=1MHz


Package
Code −
Taping
Basic ordering unit (pieces)
2SC5511 E
500
Type
hFE
100 to 200hFE
Item E
Collector power dissipation P
2 W(Ta=25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
C
Symbol
CBO
VCEO
VEBO
IC
Tj
Tstg
Limits
160
−160
−5
−1.5
20
150
−55 to +150
Unit
V
V
A
ICP
DC
Pulse −3 A
°C
Collector-base voltage V − V
)
W(Tc=25°C)
°C
°C
∗1
∗1 t=100ms