TECHNICAL DATA

NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374
Devices Qualified Level
2N3996 2N3997 2N3998 2N3999




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol Value Unit
Collector - Emitter Voltage V CEO 80 Vdc
Co llector - Base Voltage V CBO 100 Vdc
Emitter - Base Voltage V EBO 8.0 Vdc
Base Current I B 0.5 Adc
Collector Current I C 5.0 10 (1) Adc
Total Power Dissipation @ T A = +25 0 C (2)
@ T C = +100 0 C (3) P T
2.0
30 W
Operating & Storage Junction Temperature Range T J , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 3.33 0 C/W
1) This value applies for t p ≤ 1.0 ms, duty cycle ≤ 50%
2) Derate linearly 11.4 mW/ 0 C for T A > +25 0 C
3) Derate linearly 300 mW/ 0 C for T C > +100 0 C

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdow n Voltage
I C = 50 mAdc V (BR) CEO 80 Vdc
Collector - Emitter Breakdown Voltage
I C = 10 µAdc V (BR) CBO 100 Vdc
Collector - Emitter Cutoff Current
V CE = 60 Vdc I CEO 10 µAdc
Collector - Emitter Cutoff Current
V CE = 80 Vdc, V BE = 0 I CES 200 ηAdc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc
V EB = 8.0 Vdc
I EBO 200 10 ηAdc µAdc


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TO - 111*