06/2003
AWT6130
Cellular Dual Mode AMPS/CDMA 3.5V
29dBm Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
FEATURES
• InGaP HBT Technology
• High Efficiency: 48% AMPS, 37% CDMA
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant
APPLICATIONS
• Single Mode CDMA Wireless Handsets
• Dual Mode AMPS/CDMA Wireless Handsets
• Tri Mode CDMA Handsets with GPS
Figure 1: Block Diagram
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
GND
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4mm x 4mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 Ω system.
PRODUCT DESCRIPTION
The AWT6130 provides the additional output power
margin RF designers need to overcome additional
post-PA insertion loss in tri-mode handset designs
supporting E911 (GPS enabled). The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable