AS216-339
器件描述：GaAs SPDT IC 7 W T/R Switch DC-2.5 GHz
器件厂商：SKYWORKS [Skyworks Solutions Inc.]
文件大小：64.2KB，共3页
Sponsor by e络盟器件资料摘要：
Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com 1
Specifications subject to change without notice. 12/02A
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics
5
Rise, Fall (10/90% or 90/10% RF) 6 ns
On, Off (50% CTL to 90/10% RF) 12 ns
Video Feedthru 30 mV
Input Power for 1 dB Compression 5 V 0.9 GHz +35 dBm
10 V 0.9 GHz +40 dBm
Intermodulation Intercept Point For Two-tone Input Power +13 dBm
IP3 0.9 GHz +63 dBm
Control Voltages V
Low
= -12.0 V ≤ V
Low
≤ 0 V, 500 µA Max.
V
High
= 0 V ≤ V
High
≤ +12.0 V, 500 µA Max.
Differential = + 5.0 V ≤ (V
High
– V
Low
) < +12.0 V
GaAs SPDT IC 7 W T/R Switch
DC–2.5 GHz
Features
■ T/R Switch
■ High Isolation (30 dB @ 0.9 GHz)
■ Designed for Mobile Radio Applications
■ P
-1 dB
= 10 W @ 0.9 GHz, 25°C
■ High Intercept Point (IP3 +63 dBm,@ 0.9 GHz)
AS216-339
Description
The AS216-339 is a high power IC FET SPDT switch in
a plastic SOIC-8 exposed paddle package.This switch has
been designed for use where extremely high linearity is
required. It can be controlled with positive, negative or a
combination of both voltages. Some standard
implementations include antenna changeover, T/R and
diversity switching over 2 W. This switch can be used in
many analog and digital wireless communication systems
including cellular, GSM and PCS applications.
Parameter
1
Frequency
2
Min. Typ. Max. Unit
Insertion Loss
3
DC–0.5 GHz 0.7 0.8 dB
DC–1.0 GHz 0.8 0.9 dB
DC–2.5 GHz 1.0 1.1 dB
Isolation DC–0.5 GHz 32 34 dB
DC–1.0 GHz 27 28 dB
DC–2.5 GHz 19 20 dB
VSWR
4
DC–1.0 GHz 1.2:1 1.4:1 dB
DC–2.5 GHz 1.5:1 1.7:1 dB
Electrical Specifications at 25°C (0, -5 V)
0.061 (1.55 mm)
± 0.005 (0.13 mm)
0.003 (0.08 mm)
± 0.002 (0.05 mm)
0.050
(1.27 mm)
BSC
EXPOSED
PAD
0.090
(2.29 mm)
0.090
(2.29 mm)
0.078
(1.98 mm)
0.097
(2.46 mm)
0.155 (3.94 mm)
+ 0.002 (0.05 mm)
- 0.005 (0.13 mm)
0.194 (4.93 mm)
+ 0.002 (0.05 mm)
- 0.005 (0.13 mm)
PIN 1
INDICATOR
0.016 (0.41 mm)
+ 0.0032 (0.080 mm)
- 0.080 (0.060 mm)
0.236 (5.99 mm)
+ 0.008 (0.21 mm)
- 0.006 (0.15 mm)
Operating Characteristics at 25°C (0, -5 V)
SOIC-8 Exposed Paddle
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. DC = 300 kHz.
3. Insertion loss changes by 0.003 dB/°C.
4. Insertion loss state.
5. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
Specifications subject to change without notice. 12/02A
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics
5
Rise, Fall (10/90% or 90/10% RF) 6 ns
On, Off (50% CTL to 90/10% RF) 12 ns
Video Feedthru 30 mV
Input Power for 1 dB Compression 5 V 0.9 GHz +35 dBm
10 V 0.9 GHz +40 dBm
Intermodulation Intercept Point For Two-tone Input Power +13 dBm
IP3 0.9 GHz +63 dBm
Control Voltages V
Low
= -12.0 V ≤ V
Low
≤ 0 V, 500 µA Max.
V
High
= 0 V ≤ V
High
≤ +12.0 V, 500 µA Max.
Differential = + 5.0 V ≤ (V
High
– V
Low
) < +12.0 V
GaAs SPDT IC 7 W T/R Switch
DC–2.5 GHz
Features
■ T/R Switch
■ High Isolation (30 dB @ 0.9 GHz)
■ Designed for Mobile Radio Applications
■ P
-1 dB
= 10 W @ 0.9 GHz, 25°C
■ High Intercept Point (IP3 +63 dBm,@ 0.9 GHz)
AS216-339
Description
The AS216-339 is a high power IC FET SPDT switch in
a plastic SOIC-8 exposed paddle package.This switch has
been designed for use where extremely high linearity is
required. It can be controlled with positive, negative or a
combination of both voltages. Some standard
implementations include antenna changeover, T/R and
diversity switching over 2 W. This switch can be used in
many analog and digital wireless communication systems
including cellular, GSM and PCS applications.
Parameter
1
Frequency
2
Min. Typ. Max. Unit
Insertion Loss
3
DC–0.5 GHz 0.7 0.8 dB
DC–1.0 GHz 0.8 0.9 dB
DC–2.5 GHz 1.0 1.1 dB
Isolation DC–0.5 GHz 32 34 dB
DC–1.0 GHz 27 28 dB
DC–2.5 GHz 19 20 dB
VSWR
4
DC–1.0 GHz 1.2:1 1.4:1 dB
DC–2.5 GHz 1.5:1 1.7:1 dB
Electrical Specifications at 25°C (0, -5 V)
0.061 (1.55 mm)
± 0.005 (0.13 mm)
0.003 (0.08 mm)
± 0.002 (0.05 mm)
0.050
(1.27 mm)
BSC
EXPOSED
PAD
0.090
(2.29 mm)
0.090
(2.29 mm)
0.078
(1.98 mm)
0.097
(2.46 mm)
0.155 (3.94 mm)
+ 0.002 (0.05 mm)
- 0.005 (0.13 mm)
0.194 (4.93 mm)
+ 0.002 (0.05 mm)
- 0.005 (0.13 mm)
PIN 1
INDICATOR
0.016 (0.41 mm)
+ 0.0032 (0.080 mm)
- 0.080 (0.060 mm)
0.236 (5.99 mm)
+ 0.008 (0.21 mm)
- 0.006 (0.15 mm)
Operating Characteristics at 25°C (0, -5 V)
SOIC-8 Exposed Paddle
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. DC = 300 kHz.
3. Insertion loss changes by 0.003 dB/°C.
4. Insertion loss state.
5. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.