Characteristic Test Conditions Min. Typ. Max. Unit
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
1 32
3.55 (0.140)
3.81 (0.150)

0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.
80 (
0
.
8
1
9
)
21.
46 (
0
.
8
4
5
)
6.
15
(
0
.
242)
BS
C
19.
81 (
0
.
7
8
0
)
20.
32 (
0
.
8
0
0
)
4.
50
(
0
.
177)
Ma
x
.

1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC

2.87 (0.113)
3.12 (0.123)
TO247–AD Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
V
GS
= 0V , I
D
= 250µA
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
600
13
52
±30
240
–55 to 150
300
V
A
A
V
W
°C
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
600
250
1000
±100
24
13
0.60
V
µA
nA
V
A
Ω
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS (T
case
= 25°C unless otherwise stated)
BFC48
LAB
SEME
V
DSS
600V
I
D(cont)
13.0A
R
DS(on)
0.60Ω
4TH GENERATION MOSFET
Terminal 1 Gate Terminal 2 Drain
Terminal 3 Source