4AM17
器件描述：Silicon N/P Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：39.53KB，共7页
Sponsor by e络盟器件资料摘要：
4AM17
Silicon N/P Channel MOS FET
High Speed Power Switching
ADE-208-729 (Z)
1st. Edition
February 1999
Features
• Low on-resistance
N Channel: R
DS(on)
£ 0.17 W, V
GS
= 10 V, I
D
= 4 A
P Channel : R
DS(on)
£ 0.2 W, V
GS
= –10 V, I
D
= –4 A
• 4 V gate drive devices.
• High density mounting
Outline
1
2
3
4
5
6
7
8
9
10
11
12
SP-12
1
G
S 3
5
G
8
G
12
G
2
D
4
D
9
D
11
D
S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
Silicon N/P Channel MOS FET
High Speed Power Switching
ADE-208-729 (Z)
1st. Edition
February 1999
Features
• Low on-resistance
N Channel: R
DS(on)
£ 0.17 W, V
GS
= 10 V, I
D
= 4 A
P Channel : R
DS(on)
£ 0.2 W, V
GS
= –10 V, I
D
= –4 A
• 4 V gate drive devices.
• High density mounting
Outline
1
2
3
4
5
6
7
8
9
10
11
12
SP-12
1
G
S 3
5
G
8
G
12
G
2
D
4
D
9
D
11
D
S 6 S 7 S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source