Transistors
Publication date : December 2004 SJC00330AED 1
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
 Features
 High transfer ratio f
T
 SSS-Mini type package, allowing downsizing of the equipment and　
automatic insertion through the tape packing.
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
–30 V
Collector-emitter voltage (Base open) V
CEO
–20 V
Emitter-base voltage (Collector open) V
EBO
–5 V
Collector current I
C
–30 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
–55 to +125 °C
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage V
BE
V
CE
= –10 V, I
C
= –1 mA – 0.7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= –10 V, I
E
= 0 – 0.1 µA
Collector-emitter cut-off current (Base open) I
CEO
V
CE
= –20 V, I
B
= 0 –100 µA
Emitter-base cut-off current (Collector open) I
EBO
V
EB
= –5 V, I
C
= 0 –10 µA
Forward current transfer ratio h
FE
V
CB
= –10 V, I
E
= 1 mA 70 220 
Collector-emitter saturation voltage V
CE(sat)
I
C
= –10 mA, I
B
= –1 mA – 0.1 V
Transition frequency f
T
V
CB
= –10 V, I
E
= 1 mA, f = 200 MHz 150 300 MHz
Noise figure NF V
CB
= –10 V, I
E
= 1 mA, f = 5 MHz 2.8 dB
Reverse transfer impedance Z
rb
V
CB
= –10 V, I
E
= 1 mA, f = 2 MHz 22 Ω
Common-emitter reverse transfer capacitance C
re
V
CB
= –10 V, I
E
= 1 mA, f = 10.7 MHz 1.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector SSSMini3-F1 Package
1.20
±
0.05
0.5
2
±
0.03
0 to 0.01
0.15 max.
5°
0.15 min
.
0.80
±
0.05
0.15 min.
0.33
(0.40)(0.40)
1 2
3
5°
0.80±0.05
1.20±0.05
+0.05
–0.02
0.10
+0.05
–0.02
0.23
+0.05
–0.02
Marking Symbol : E