TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/528
Devices Qualified Level
2N6032 2N6033




JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N6032 2N6033 Units
Collector - Emitter Voltage V CEO 90 120 Vdc
Collector - Base V oltage V CBO 120 150 Vdc
Collector Current I C 50 40 Adc
Emitter - Base Voltage V EBO 7.0 Vdc
Base Current I B 10 Adc
Total Power Dissipation @ T C = +25 0 C (1) P T 140 W
Operating & Storage Temperature Range T op , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.25 0 C/W
1) Derate linearly 800 mW/ 0 C between T C = 25 0 C and T C = 200 0 C






TO - 3*
(TO - 204AA)

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 200 mAdc 2N6032
2N6033

V (BR) CEO

90
120

Vdc
Collector - Emitter Breakdown Voltage
I C = 200 mAdc 2N6032
2N6033

V (BR) CER

110
140

Vdc
Collector - Emitter Breakdown Voltage
I C = 200 mAdc, V EB = 1.5 Vdc 2N6032
2N6033

V (BR) CEX

120
150

Vdc
Collector - Base Cutoff Current
V CB = 120 Vdc 2N6032
V CB = 150 Vdc 2N6033

I CBO

25
25

mAdc
Collector - Emitter Cutoff Curr ent
V CE = 110 Vdc, V BE = - 1.5 Vdc 2N6032
V CE = 135 Vdc, V BE = - 1.5 Vdc 2N6033

I CEX

12
10

mAdc

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