BULD1101ET4
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
a73 HIGH VOLTAGE CAPABILITY
a73 LOW SPREAD OF DYNAMIC PARAMETERS
a73 MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
a73 VERY HIGH SWITCHING SPEED
a73 LARGE RBSOA
a73 SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
a73 ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
April 2003
1
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 1100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 450 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 12 V
IC Collector Current 3 A
I
CM
Collector Peak Current (t
p
<5 ms) 6 A
IB Base Current 1.5 A
I
BM
Base Peak Current (t
p
<5 ms) 3 A
Ptot Total Dissipation at Tc = 25
o
C35W
T
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C

DPAK
TO-252
(Suffix "T4")
®
Ordering Code Marking Shipment
BULD1101ET4 BULD1101E Tape & Reel
1/7