2SC5647
No.7326-1/7
Features
•
Low noise : NF=2.6dB typ (f=2GHz).
•
High cutoff frequency : f
T
=9.0GHz typ (V
CE
=1V).
: f
T
=11.5GHz typ (V
CE
=3V).
•
Low operating voltage.
•
High gain : S21e
2
=10.5dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
9V
Collector-to-Emitter Voltage V
CEO
4V
Emitter-to-Base Voltage V
EBO
2V
Collector Current I
C
20 mA
Collector Dissipation P
C
80 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Marking : NH
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
0.8
0.4
0.4
2
3
1.6
0.2
1.6
0.3
0.5
1
0.5
0.75
0.6
0 to 0.1
0.1
0.1max
UHF to S Band Low-Noise Amplifier
and OSC Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7326
2SC5647
Package Dimensions
unit : mm
2106A
[2SC5647]
D2502 TS IM TA-3664
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Pay attention to
handling since it is
liable to be affected by
static electricity due to
the high-frequency
process adopted.