Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
82 150
12
18
270
V
V
V
V
MHz
pF
IC 50 A
IC 1mA
IE 50 A
VCB 400V
VEB 6V
IC/IB 100mA / 10mA
VBE(sat) V IC/IB 100mA / 10mA
VCE 5V , IC 50mA
VCB 5V , IE 50mA , f 5MHz
VCE 10V , IE 0A , f 1MHz
ton 0.6
tstg 2.7
tf 1
Type 2SA1812
MPT3
PQ
T100
3000
2SA1727
CPT3
PQ
TL
3000
2SA1776
ATV
PQ
TV2
AJ
2500
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
7
0.5
2
0.5
150
55 to +150
Unit
V
V
V
A (DC)
1.0 1A (Pulse)
W
W
W
W (Tc 25°C)
1
2SA1812
2SA1727
2SA1776 W
10
1
°C
°C
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board.
3 When t = 1.7mm and the foil collector area on the PC board is 1cm
2
or greater.
IC 100mA, RL 1.5k
IB1 IB2 10mA
VCC to 150V

Denotes hFE
2
3
High-voltage Switching Transistor
( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
2SA1812 / 2SA1727 / 2SA1776
Packaging specifications and hFE
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current tranfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
400
400
7
10
10
1
1.2
A
A
s
s
s
400
400
Features
1) High breakdown voltage, BVCEO= 400V.
2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.
3) High switching speed, typically tf : 1 s at IC = 100mA.
4) Wide SOA (safe operating area).
Transistors
2/3
1/3Rev.A