SST4403 / MMST4403 / 2N4403
Transistors
Rev.B 1/3
PNP Medium Power Transistor
(Switching)
SST4403 / MMST4403 / 2N4403


zFeatures
1) BVCEO = −40V (Min.) ; at IC= −1mA
2) Complements the SST4401 / MMST4401 / PN4401


zPackage, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SST4403
SST3
R2X
T116
3000
MMST4403
SMT3
R2X
T146
3000
2N4403
TO-92
−
T93
3000



zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Limits
−40
−40
−6
−0.6
0.625
150
−55 to +150
Unit
V
V
V
A
Collector power
dissipation PC
0.2
0.35
W
W
W
˚C
˚C
2N4403
SST4403
MMST4403
SST4403
MMST4403
∗ Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE
+ +



zExternal dimensions (Unit : mm)
SST4403
MMST4403
2N4403
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
0 to 0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+
0.2
−
0.1
−0.1
+0.2
+ 0.1
−0.06+0.1
−0.05
(2)(1)
(3)
0 to 0.1
2.8
±
0.2
1.6
0.3 to 0.6
1.1
0.8± 0.1
0.15
0.4
2.9± 0.2
1.9± 0.2
0.95 0.95
+
0.2
−
0.1
− 0.1
+ 0.2
+ 0.1
− 0.06+ 0.1
− 0.05
(2)(1)
(3)
4.8
±
0.2
(12.7Min.)
3Min.
4.8 ± 0.2 3.7 ± 0.2
5 0.45 ± 0.1 2.3
0.5 ± 0.1
2.5
+ 0.3
− 0.1
(1) (2) (3)
All terminals have the same
dimensions
All terminals have the same
dimensions

zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
−40
−40
−5
−
−
−
−
−
−
−
−
−
−
−0.1
−0.1
V
V
V
µA
µA
IC= −100µA
IC= −1mA
IE= −100µA
VCB= −35V
VEB= −5V
−−−1.3
Base-emitter saturation voltage VBE(sat)
−0.75 −−0.95
V
−−−0.75 IC/IB= −500mA/ −50mA
Collector-emitter saturation voltage VCE(sat)
−−−0.4
V
IC/IB= −150mA/ −15mA
IC/IB= −500mA/ −50mA
IC/IB= −150mA/ −15mA
20 −−
100 − 300
DC current transfer ratio hFE 100 −−−
60 −−
30 −− VCE= −1V, IC= −0.1mA
VCE= −1V, IC= −1mA
VCE= −1V, IC= −10mA
VCE= −1V, IC= −150mA
VCE= −2V, IC= −500mA
Transition frequency
Collector output capacitance
fT
Cob
200
−
−
−
−
8.5
MHz
pF
VCE= −10V, IE=20mA, f=100MHz
VCB= −10V, f=100kHz
Emitter input capacitance Cib −−30 pF VEB= −0.5V, f=100kHz
Delay time td −−15 ns VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA
VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mARise time tr −−20 ns
Storage time tstg −−225 ns VCC= −30V, IC= −150mA, IB1= −IB2= −15mA
VCC= −30V, IC= −150mA, IB1= −IB2= −15mA Fall time tf −−30 ns