©2003 Fairchild Semiconductor Corporation HUF76132P3, HUF76132S3S Rev. C1
HUF76132P3, HUF76132S3S
75A, 30V, 0.011 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76132.
Features
Logic Level Gate Drive
75A, 30V
Ultra Low On-Resistance, r
DS(ON)
= 0.011Ω
Temperature Compensating PSPICE
®
Model
Temperature Compensating SABER
©
Model
Thermal Impedance SPICE Model
Thermal Impedance SABER Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER PACKAGE BRAND
HUF76132P3 TO-220AB 76132P
HUF76132S3S TO-263AB 76132S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76132S3ST.
D
G
S
JEDEC TO-220AB JEDEC TO-263AB
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet January 2003