AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET


This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Nov 14, 2005
1/8
„ Features

- Lower On-Resistance
- Simple Drive Requirement
- Fast Switching Performance
- Pb Free Plating Product

„ Product Summary

CH BV
DSS
(V) R
DS(ON)
(mΩ) I
D
(A)
N 30 28 6.9
P -30 55 -5.3



„ Pin Assignments


SO-8
5
6
7
8
4
3
2
1 D1
D1
D2
D2
S1
G1
S2
G2

„ General Description

The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
costeffectiveness.

The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applicat ions such as DC/DC
converters.



„ Pin Descriptions


Pin Name Description
S1 Source (NMOS)
G1 Gate (NMOS)
D1 Drain (NMOS)
S2 Source (PMOS)
G2 Gate (PMOS)
D2 Drain (PMOS)


„ Ordering information

A X 8510C X X
PN PackageFeature
F :MOSFET S: SOP-8
Packing
Blank : Tube or Bulk
A : Tape & Reel