2SD2264
Transistors
Rev.A 1/3
Low Frequency Transistor (20V, 3A)
2SD2264


zFeatures
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
（IC / IB = 2A / 0.1A）
2) Excellent current gain characteristics.



zStructure
Epitaxial planar type
NPN silicon transistor






zExternal dimensions (Unit : mm)
2SD2264
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
1.0
6.8±0.2
2.5±0.2
1.05 0.45±0.1
2.54 2.54
0.5±0.1
0.9 4.4
±
0.2
14.5
±
0.5
(1) (2) (3)
0.65Max.
∗
Denotes hFE



zAbsolute maximum ratings (Ta=25°C)
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
40 V
V
V
A (DC)
W
°C
°C
20
6
3
A (Pulse)5
1
∗
1
∗
2
150
−55 to +150
Symbol Limits Unit
∗
1 Single pulse Pw=10ms
∗
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature