2SD2142K
Transistors
Rev.A 1/2
High-gain Amplifier Transistor (30V, 0.3A)
2SD2142K


zFeatures
1) Darlington connection for a high hFE.
(DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA)
2) High input impedance.


zAbsolute maximum ratings (Ta=25
°
C)
E
C
B
C
B
E
: Emitter
: Collector
: Base

zExternal dimensions (Unit : mm)
Each lead has same dimensions
SMT3
(1)Emitter
(2)Base
(3)Collector
(2) (1)
2.81.6
0.4
(3)
2.9
1.9
0.95 0.95
0.8
0.15
0.3Min.
1.1



zAbsolute maximum ratings (Ta=25
°
C)
Parameter Symbol
VCBO
VCER
VEBO
IC
PC
Tj
Tstg
Limits
30
30
10
0.3
0.2
150
−55 to +150
Unit
V
V
V
A
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature



zElectrical characteristics (Ta=25
°
C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCES
BVEBO
ICBO
IEBO
fT
Cob
30
30
12
−
−
10000
−
−
−
−
−
−
−
−
200
5.4
−
−
−
0.1
0.1
−
− ∗
−
V
V
V
µA
µA
−
MHz
pF
IC=10µA
IC=100mA
IE=10µA
VCB=30V
VEB=10V
VCE(sat) −−1.5 V IC/IB=100mA/0.1mA
hFE1
hFE2
5000 −−−VCE/IC=3V/10mA
VCE/IC=5V/100mA
VCE=5V , IE=−10mA , f=100MHz
VCB=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
VBE(on) −−2VCE/IC=5V/100mABase-emitter voltage
∗ Transition frequency of the device.



zPackaging specifications and hFE
Type 2SD2142K
SMT3
5k~
T146
3000
Package
hFE
Code
Basic ordering unit (pieces)