2SD1766 / 2SD1758 / 2SD1862
Transistors
Rev.A 1/3
Medium Power Transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862


zFeatures
1) Low VCE(sat).
VCE(sat) = 0.5V(Typ.)
（IC / IB = 2A / 0.2A）
2) Complements the 2SB1188 / 2SB1182 /
2SB1240.



zStructure
Epitaxial planar type
NPN silicon transistor












zExternal dimensions (Unit : mm)
−
0.1
+
0.2
−0.05
+0.1
−0.1
+0.2
+0.2
−0.1
(3)(2)(1)
4.0
±
0.3
1.0
±
0.2
0.5
±
0.1
2.5
3.0±0.2
1.5±0.11.5±0.1
0.4±0.1 0.5±0.1 0.4±0.1
0.4
1.5
4.5
1.6±0.1
±0.1
−0.1
+0.2
−0.1
+0.2
+
0.3
−
0.1
2.3±0.22.3±0.2
0.65±0.1
0.9
0.75
1.0±0.2
0.55
9.5
±
0.5
5.5
1.5
±
0.3
2.5
1.5
2.3
0.5±0.1
6.5±0.2
5.1
C0.5
(3)(2)(1)
0.9
1.0
6.8±0.2
2.5±0.2
1.05 0.45±0.1
2.54 2.54
0.5±0.1
0.9 4.4
±
0.2
14.5
±
0.5
(1) (2) (3)
0.65Max.
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
2SD1766 2SD1758
2SD1862
Abbreviated symbol : DB∗
∗ Denotes hFE
zAbsolute maximum ratings (Ta=25°C)
2SD1766
2SD1758
2SD1862
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
∗
1 Single pulse, Pw=20ms
∗
2 When mounted on a 40×40×0.7 mm ceramic board.
∗
3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm
2
or lager.
Parameter Symbol Limits Unit
VCBO 40 V
VCEO 32 V
VEBO 5V
IC
ICP
2 A (DC)
2.5 A (Pulse)
∗
1
Tj 150 °C
Tstg −55 to +150 °C
PC
0.5
1 ∗3W
2
∗
2
1 W
10 W (Tc=25°C)
W