Rev.1.00, Apr.20.2004, page 1 of 10
2SC5998
Silicon NPN Epitaxial
High Frequency Medium Power Amplifier
REJ03G0169-0100Z
Rev.1.00
Apr.20.2004
Features
• High Transition Frequency
f
T
= 11 GHz typ.
• High gain and Excellent Efficiency
Maximum Available Gain (MAG) = +22 dB typ. at V
CE
= 3.6 V, I
C
= 100 mA, f = 500 MHz
Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz
• High Collector to Emitter Voltage
V
CEO
= 5 V
• Ideal for up to 2GHz applications.
e.g FRS(Family Radio Service) Power Amplifier ,
GMRS (General Mobile Radio Service) Driver Amplifier
Outline
1
2
3
1. Collector
2. Base
3. Emitter
MPAK
Note: Marking is “YC-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
13 V
Collector to emitter voltage V
CEO
5V
Emitter to base voltage V
EBO
1.5 V
Collector current I
C
500 mA
Collector power dissipation Pc 700
note
mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Value on PCB ( FR-4 : 25 x 30 x 1.0mm Double side )